1/2 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.05 - rev.f power transistor ( ? 80v, ? 1a) 2sb1260 / 2sb1181 / 2SB1241 ? features ? dimensions (unit : mm) 1) hight breakdown voltage and high current. bv ceo = ?? 80v, i c = ?? 1a 2) good h fe linearty. 3) low v ce(sat) . complements the 2sd1898 / 2sd1863 / 2sd1733. ? structure epitaxial planar type pnp silicon transistor ? absolute maximum ratings (ta=25 ? c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? 1 2sb1260 : pw = 20ms duty = 1/2 2SB1241 : single pulse, pw = 100ms ? 2 2sb1260 : when mounted on a 40 40 0.7 mm ceramic board. ? 3 2SB1241 : printed circuit board, 1.7mm thick, collector copper plating 100mm 2 or larger. parameter v cbo v ceo v ebo i c p c tj tstg ? 80 v v v a (dc) w c c ? 80 ? 5 ? 1 i cp a (pulse) ? 2 ? 1 0.5 2 ? 2 1 ? 3 10 2sb1260 2SB1241, 2sb1181 2sb1181 150 ? 55 to +150 symbol limits unit w (tc=25 c ) 2sb1260 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 + 0.2 + 0.1 + 0.2 (3) (2) (1) 4.0 1.0 0.2 0.5 0.1 2.5 3.0 0.2 1.5 0.1 1.5 0.1 0.4 0.1 0.5 0.1 0.4 0.1 0.4 1.5 4.5 1.6 0.1 0.3 2SB1241 (1) emitter (2) collector (3) base rohm : atv 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2sb1181 + 0.2 + 0.2 + 0.3 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9
2/2 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.05 - rev.f data sheet 2sb1260 / 2sb1181 / 2SB1241 ? electrical characteristics (ta=25 ? c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) cob min. ? 80 ? 80 ? 5 ? ? 120 2sb1260, 2sb1181 2sb1181, 2SB1241 2SB1241 2sb1181 2sb1260 ? ? ? ? ? ? ? ? ? ? 100 25 ? ? ? ? 1 ? 1 390 ? 0.4 ? ? vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 60v v eb = ? 4v v ce = ? 3v, i c = ? 0.1a i c /i b = ? 500ma/ ? 50ma v ce = ? 10v, i e = 50ma, f = 100mhz v cb = ? 10v i e = 0a f = 1mhz v v a a ? 120 ? 390 ? v mhz f t pf ? 20 ? pf typ. max. unit conditions ? packaging specifications and h fe package code taping basic ordering unit (pieces) 2500 2500 1000 ? qr h fe 2sb1260 tl ? ? qr 2SB1241 qr 2sb1181 ? tv2 ? ? t100 type h fe values are classified as follows : item h fe q 120 to 270 r 180 to 390 ? electrical characteristic curves 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1 base to emitter voltage : v be [v] collector current : i c [ma] ta=25 v ce =-5v 0 100 200 300 400 500 00.511.52 collecor - emitter voltage : v ce [v] collector current : i c [ma] i b =0.5m a 1.0m a 1.5m a 2.0m a 2.5m a 3.0m a 3.5m a 4.0m a 4.5m a ta=25 pulsed 5.0m a fig.5 transition frewuency v s emitter current 10 100 1000 1 10 100 1000 emitter current : i e [ma] transition frequency : f t [mhz] ta=25 v ce =-5v 10 100 1000 0.1 1 10 100 collector - base voltage : v cb (v) e mitte r - base volt age : v eb (v) ta=25 f=1mhz i e =0a i c =0a emitter input capacitance : cib(pf) cob cib collector output capacitance : cob(pf) fig.3 dc current gain v s collector current 10 100 1000 1 10 100 1000 collector current : i c [ma] dc current gain : h fe ta=25 v ce =-3v v ce =-1v fig.4 collector-emitter saturation voltage v s collector current 0.01 0.1 1 1 10 100 1000 collector current : i c [ma] collector saturation voltage : v ce(sat ) [v] ta=25 i c /i b =20 10 fig.6 emitter input capacitance v s. emitter-base voltage collector output capacitance v s. collector-base fig.1 ground emitter output characteristics fig.2 grounded emitter propagation characteristics
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